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Advance Technical Information
PolarHVTM HiPerFET IXFT 140N10P Power MOSFETs
N-Channel Enhancement Mode Fast Intrinsic Diode; Avalanche Rated
IXFH 140N10P
VDSS ID25
RDS(on)
= = =
100 V 140 A 11 m
TO-247 (IXFT) Symbol VDSS VDGR VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-247 TO-268 (TO-247) TC = 25C External lead current limit TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 4 TC = 25C 600 -55 ... +175 175 -55 ... +150 300 W C C C C Test Conditions TJ = 25C to 175C TJ = 25C to 175C; RGS = 1 M Maximum Ratings 100 100 20 140 75 300 60 80 2.5 10 V V V A A A A mJ J V/ns
G = Gate S = Source D = Drain TAB = Drain G S D (TAB) G D D (TAB) S
TO-268 (IXFT)
Features International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
1.13/10 Nm/lb.in. 6.0 5.0 g g
Symbol Test Conditions (TJ = 25C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 4.0 mA VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 175C
Characteristic Values Min. Typ. Max. 100 3.0 5.0 100 25 500 11 9 V V nA A A m m
Advantages Easy to mount Space savings High power density
VGS = 10 V, ID = 0.5 ID25 VGS = 15 V, ID = 300 A Pulse test, t 300 s, duty cycle d 2 %
(c) 2004 IXYS All rights reserved
DS99213(02/04)
IXFH 140N10P IXFT 140N10P
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 45 65 4700 VGS = 0 V, VDS = 25 V, f = 1 MHz 1850 600 35 VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A RG = 4 (External) 50 85 26 155 VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 33 85 S pF
1 2 3
TO-247 AD Outline
gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS= 10 V; ID = 0.5 ID25, pulse test
pF pF ns ns ns ns nC nC nC 0.25 K/W
Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain
Dim.
(TO-247)
0.21
K/W
Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive
Characteristic Values (TJ = 25C, unless otherwise specified) Min. typ. Max. 140 300 1.5 A A V
Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
TO-268 Outline
IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 25 A -di/dt = 100 A/s VR = 50 V 120 0.8 6
ns C A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344
IXFH 140N10P IXFT 140N10P
Fig. 1. Output Characteristics @ 25C
140 120 100 VGS = 10V 9V 300 270 240 VGS = 10V
Fig. 2. Extended Output Characteristics @ 25C
I D - Amperes
210
9V
I D - Amperes
80 8V 60 7V 40 20 6V 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
180 150 8V 120 90 60 30 0 0 1 2 3 4 6 V D S 5 Volts 7 8 9 10 7V 6V
V D S - Volts Fig. 3. Output Characteristics @ 150C
140 120 100 VGS = 10V 9V 2.4 2.2
Fig. 4. RDS(on) Norm alize d to 0.5 ID25 Value vs. Junction Te m perature
VGS = 10V
R D S ( o n ) - Normalized
2 1.8 1.6 1.4 1.2 1 0.8 0.6 I D = 140A
I D - Amperes
80 60 40 20
8V
7V 6V
I D = 70A
5V 0 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2
-50
-25
0
25
50
75
100
125
150
175
V D S - Volts Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs . Drain Curre nt
3 2.75 90 80 70 TJ = 175C
TJ - Degrees Centigrade Fig. 6. Drain Curre nt vs . Cas e Tem pe rature
External Lead Current Limit
R D S ( o n ) - Normalized
2.5
I D - Amperes
2.25 2 1.75 1.5 VGS = 15V 1.25 TJ = 25C 1 0.75 0 50 100 150 200 250 300 350 VGS = 10V
60 50 40 30 20 10 0 -50 -25 0 25 50 75 100 125 150 175
I D - Amperes
TC - Degrees Centigrade
(c) 2004 IXYS All rights reserved
IXFH 140N10P IXFT 140N10P
Fig. 7. Input Adm ittance
250 225 200 90 80 70
Fig. 8. Transconductance
150 125 100 75 50 25 0 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 TJ = 150C 25C -40C
g f s - Siemens
175
I D - Amperes
60 50 40 30 20 10 0 0 40 80 120 160 200 240 280 320 TJ = -40C 25C 150C
V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage
300 10 9 250 8 7 VDS = 50V I D = 70A I G = 10mA
I D - Amperes Fig. 10. Gate Charge
I S - Amperes
200
VG S - Volts
TJ = 150C TJ = 25C 0.4 0.6 0.8 1 1.2 1.4 1.6
6 5 4 3 2 1 0 0 20 40 60 80 100 120 140 160
150
100
50
0
V S D - Volts
Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area
1000 TJ = 175C
Fig. 11. Capacitance
10000
Capacitance - picoFarads
C iss
R DS(on) Limit
TC = 25C 25s 100s 1ms 10ms
1000
I D - Amperes
C oss
100
C rss f = 1MHz 100 0 5 10 15 20 25 30 35 40 10 1 10 100 1000 DC
V DS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715
V D S - Volts
6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344
IXFH 140N10P IXFT 140N10P
F ig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l R e s is t a n c e
1.00
R( t h ) J C - C / W
0.10
0.01 0.1 1 10 100 1000
Pu ls e W id th - m illis e c o n d s
(c) 2004 IXYS All rights reserved

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